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| PD- 93928 PROVISIONAL IRFBL18N50K HEXFET(R) Power MOSFET SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage and Current l VDSS 500V RDS(on) 0.25 ID 18A Super D2pakTM Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Max. 18 11 72 200 1.6 30 5.0 -55 to + 150 260 Units A W W/C V V/ns C Diode Characteristics Symbol IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 18 --- --- showing the A G integral reverse --- --- 72 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 18A, VGS = 0V --- 540 --- ns TJ = 125C, IF = 18A --- 5.0 --- C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typical SMPS Topologies l l l Hard Switching Full and Half Bridge Circuits Hard Switching Single Transistor Circuits Power Factor Correction Circuits www.irf.com 1 6/2/00 IRFB18N50K Symbol V(BR)DSS V(BR)DSS/TJ PROVISIONAL Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.55 --- V/C Reference to 25C, ID = 1mA --- --- 0.25 VGS = 10V, ID = 11A 3.5 --- 5.5 V VDS = V GS, ID = 250A --- --- 50 A VDS = 500V, VGS = 0V --- --- 250 A VDS = 400V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V RDS(on) VGS(th) IDSS IGSS Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 7.5 --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 20 55 45 45 3000 300 20 Max. Units Conditions --- S VDS = 50V, ID = 11A 110 ID = 18A 40 nC VDS = 400V 50 VGS = 10V, --- VDD = 250V --- ID = 18A ns --- RG = 4.3 --- VGS = 10V, --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 430 18 20 Units mJ A mJ Thermal Resistance Symbol RJC RJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted, steady-state) Typ. --- --- Max. 0.63 40 Units C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Starting TJ = 25C, L = 5.0mH, RG = 25, IAS = 18A, ISD 18A, di/dt TBDA/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com PROVISIONAL IRFB18N50K TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8) 2.87 (.11 3) 2.62 (.10 3) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.03 7) 0.69 (.02 7) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0 .3 6 (.01 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) 2 .64 (.10 4) 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . TO-220AB Part Marking Information E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 3 |
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